DSpace Collection:http://archives.univ-biskra.dz/handle/123456789/21672023-10-14T04:53:19Z2023-10-14T04:53:19ZModeling the effect of defects on the performance of an n-CdO/p-Si solar cellS. ChalaN. SengougaF. Yakuphanogluhttp://archives.univ-biskra.dz/handle/123456789/73642019-05-06T11:54:04Z2016-03-03T00:00:00ZTitre: Modeling the effect of defects on the performance of an n-CdO/p-Si solar cell
Auteur(s): S. Chala; N. Sengouga; F. Yakuphanoglu
Résumé: The interest in the study of Cadmium oxide (CdO) for photonic applications has
increased significantly because of its promising electrical and optical properties. Real
solar cells based on an n-CdO/p-Si heterostructures show poor photovoltaic
performance, however. In this work numerical simulation is used to elucidate this poor
performance by considering two cases. CdO is firstly considered as a perfect crystalline
semiconductor. The second case models CdO as a semiconductor with continuous
distribution of defects states in its band gap, similar to an amorphous semiconductor,
made of two tail bands (a donor-like and an acceptor-like) and two Gaussian
distribution deep level bands (an acceptor-like and a donor-like). Evidently the first
case produced results far from reality. In the second case, however, and by adjusting
the constituents of the band gap states the open circuit voltage (VOC) and the short
circuit current (JSC) were almost perfectly reproduced but not the fill factor (FF) and the
conversion efficiency (η). The p-type doping of Silicon adjustment has lead to a better
reproduction of the two latter parameters.2016-03-03T00:00:00ZOptimization of Optical Gain in Inx Ga1-xSb/GaSb unstrained quantum well structuresSaid DehimiAissat AbdelkaderDjamel HaddadLakhdar Dehimihttp://archives.univ-biskra.dz/handle/123456789/73632019-05-06T11:57:08Z2016-03-03T00:00:00ZTitre: Optimization of Optical Gain in Inx Ga1-xSb/GaSb unstrained quantum well structures
Auteur(s): Said Dehimi; Aissat Abdelkader; Djamel Haddad; Lakhdar Dehimi
Résumé: n this paper we study the effects of In concentration, temperature, quantum well width and carrier density on optical gain for
GaSb/InxGa1-xSb/GaSb untrained quantum well structures. This system was chosen as it is useful in infrared emission, finally, we
introduce the optimum structure of quantum well to obtain the maximum optical gain, at room temperature and infrared emission
particularly 2.3 (μm), for the use this structure in application of spectroscopic analysis of the gases specially CH4. This structure
can be used for light absorption to increase the solar cell efficiency a based on a quantum well and multi-junction.2016-03-03T00:00:00ZSMALL-SIGNAL TIME-DOMAIN PHYSICAL/ELECTRICAL FET MODELING APPROACHN.A. AbdeslamS. AsadiN. SengougaM.C.E. Yagoubhttp://archives.univ-biskra.dz/handle/123456789/73622019-05-06T11:54:01Z2016-03-03T00:00:00ZTitre: SMALL-SIGNAL TIME-DOMAIN PHYSICAL/ELECTRICAL FET MODELING APPROACH
Auteur(s): N.A. Abdeslam; S. Asadi; N. Sengouga; M.C.E. Yagoub
Résumé: In this paper, a reliable small-signal time-domain FET
modeling approach is proposed. Based on physical/electrical
parameters, the proposed model can efficiently characterize
high-frequency transistors.2016-03-03T00:00:00ZNumerical simulation of bias and photo stress on indium-gallium-zinc-oxide thin film transistorsM. AdaikaAf MeftahN. SengougaM. Heninihttp://archives.univ-biskra.dz/handle/123456789/73612019-05-06T11:55:44Z2016-03-03T00:00:00ZTitre: Numerical simulation of bias and photo stress on indium-gallium-zinc-oxide thin film transistors
Auteur(s): M. Adaika; Af Meftah; N. Sengouga; M. Henini
Résumé: Thin Film Transistors based on amorphous Indium-Gallium-Zinc-Oxide (a-IGZO
TFT) are receiving a great deal of attention for their numerous applications as
alternatives for amorphous and poly-crystalline Silicon based TFTs. A major concern
about a-IGZO TFTs is that they suffer from instabilities when subjected to different
types of stress (bias, light, etc...). Stress is believed to create defects of different kinds
in different regions of the device. The instability manifests as a shift in the threshold
voltage or a hump in the transfer characteristics of the transistor. In addition, there is
still a great deal of confusion about the relation between defects and the instability
induced by stress. The main purpose of this study is to elucidate the relation between
the threshold voltage shift (instability) and the defects created by stress. For this
purpose a detailed numerical simulation was carried out to investigate the relation
between the different types of defects created by stress and the induced instability in
a-IGZO TFT. It was found that tail, deep and interface states cause a shift in threshold
voltage. Negative and positive shifts are observed if the defects are donor-like and
acceptor-like defects, respectively. On the other hand, a hump in the transfer
characteristics is induced if discrete interface levels are dominant.2016-03-03T00:00:00Z