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http://archives.univ-biskra.dz/handle/123456789/2170
2024-03-29T07:08:30ZLa résistivité d'une diode au silicium utilisée comme détecteur de particules
http://archives.univ-biskra.dz/handle/123456789/7359
Titre: La résistivité d'une diode au silicium utilisée comme détecteur de particules
Auteur(s): Saadoune Achour; Dehimi Lakhdar
Résumé: Résumé
La résistivité (ρ) d’une structure p+nn+ au silicium, utilisée comme détecteur de particules
travaillant dans un environnement hostile et soumis à de fortes fluences, est simulé numériquement
en utilisant la méthode des différences finies. Lorsque cette jonction est soumise à des fortes
radiations, des défauts structuraux sont créés qui ont des effets indésirables et peuvent dégrader les
performances des détecteurs. Ces défauts se manifestent comme des pièges accepteurs et des centres
de génération-recombinaison (g-r).
La résistivité augmente avec l’augmentation de la densité du piège accepteur pour atteindre la
résistivité intrinsèque (maximale).2016-03-03T00:00:00ZTwo-dimensional Modelling and Simulation of CIGS thin-film solar cell
http://archives.univ-biskra.dz/handle/123456789/7358
Titre: Two-dimensional Modelling and Simulation of CIGS thin-film solar cell
Auteur(s): S. Tobbeche; H. Amar
Résumé: Abstract: 2 D Silvaco Atlas software is used for the study of a CIGS thin film solar cell in the configuration: ZnO(200
nm)/n-type CdS(50 nm)/ p-type CIGS(350 nm)/Mo. The cell performance is evaluated by implementing the defects created
at the grain boundaries of the polycrystalline CdS and CIGS material and at the interface CdS/CIGS.The J-V characteristics
and the external quantum efficiency EQE are simulated under AM 1.5 illumination. The conversion efficiency of 20.35%
is reached and the other characteristic parameters are simulated: the short circuit current density J equals 35.62 mA/cm ,
the open circuit voltage V is of 0.69 Vand the fill factor FF is of 82.7 %. The calculated external parameters of the solar
cell are in good agreement with the measured characteristics. The simulation results also showed that the rise of the CdS
thickness decreases all output parameters and the external quantum efficiencywhile the rise of the CIGS thickness improves
all photovoltaic parameters and the external quantum efficiency. The highest efficiency of 21.08 % is reached for the CIGS
thickness of 5 μm.2016-03-03T00:00:00ZNumerical simulation of radiation damage on the device performance of GaAs MESFETs
http://archives.univ-biskra.dz/handle/123456789/7357
Titre: Numerical simulation of radiation damage on the device performance of GaAs MESFETs
Auteur(s): Y. Beddiafi; A. Saadoune; L. Dehimi
Résumé: Abstract
In this work, the effect of the radiation on the current-voltage characteristics of device GaAs metal Schottky field effect
transistors (MESFET) at room temperature is investigated. Numerical Simulation tuned by means of a physics based device
simulator. When the substrate of this transistor is subjected to radiations, structural defects, which are created, have
undesirable effects and can degrade the performance of the transistors. These defects appear like deep traps. Results showed
that in the presence of donor traps the current-voltage characteristics increases. However, acceptor traps have a significant
effect on the current-voltage characteristics. In the presence of acceptor traps, the space charge zone in the channel increases,
hence, reduces the current drain.2016-03-03T00:00:00ZELECTRICAL CHARACTERIZATION OF THE FORWARD CURRENT- VOLTAGE OF AL IMPLANTED 4H-SIC PIN DIODES
http://archives.univ-biskra.dz/handle/123456789/7356
Titre: ELECTRICAL CHARACTERIZATION OF THE FORWARD CURRENT- VOLTAGE OF AL IMPLANTED 4H-SIC PIN DIODES
Auteur(s): M.L. MEGHERBI; L. DEHIMI; A.SAADOUNE; W. TERGHINI; F. PEZZIMENTI; F.G. DELLA CORTE
Résumé: ABSTRACT
In this work,theforward current-voltagecharacteristics of n-type Al implanted 4H-SiC pin diodeshave been investigated
experimentally and by mean of numerical simulations in the 298-378K temperature range. Our simulations were performed
using proprietary simulations software. The model parameters to be calibrated in the simulation are the electron and hole
minority carriers lifetimes.The measured forward I-V characteristics showed two differentbehaviour, the leaky behaved and
well behaved diode. The later diodes were considered for simulation comparison.Employing temperature-dependent carrier
lifetimes as a fitting parameter, the simulation indicates that drift layer and bulk carrier lifetime ranging from 10ns to 50ns. We
achieved a good agreement between simulations and measured data. The measured and the simulated forward characteristics
indicate an ideality factor of about1.3for the region 2.5V-2.78Vand 2.14 in the low injection region. Activation energies of
about 1.61eV and 2.51eVare obtained respectively which are in good agreement with the expected values.2016-03-03T00:00:00Z