http://archives.univ-biskra.dz/handle/123456789/2170 Mon, 06 Apr 2026 19:43:15 GMT 2026-04-06T19:43:15Z http://archives.univ-biskra.dz/handle/123456789/7359 Titre: La résistivité d'une diode au silicium utilisée comme détecteur de particules Auteur(s): Saadoune Achour; Dehimi Lakhdar Résumé: Résumé La résistivité (ρ) d’une structure p+nn+ au silicium, utilisée comme détecteur de particules travaillant dans un environnement hostile et soumis à de fortes fluences, est simulé numériquement en utilisant la méthode des différences finies. Lorsque cette jonction est soumise à des fortes radiations, des défauts structuraux sont créés qui ont des effets indésirables et peuvent dégrader les performances des détecteurs. Ces défauts se manifestent comme des pièges accepteurs et des centres de génération-recombinaison (g-r). La résistivité augmente avec l’augmentation de la densité du piège accepteur pour atteindre la résistivité intrinsèque (maximale). Thu, 03 Mar 2016 00:00:00 GMT http://archives.univ-biskra.dz/handle/123456789/7359 2016-03-03T00:00:00Z http://archives.univ-biskra.dz/handle/123456789/7358 Titre: Two-dimensional Modelling and Simulation of CIGS thin-film solar cell Auteur(s): S. Tobbeche; H. Amar Résumé: Abstract: 2 D Silvaco Atlas software is used for the study of a CIGS thin film solar cell in the configuration: ZnO(200 nm)/n-type CdS(50 nm)/ p-type CIGS(350 nm)/Mo. The cell performance is evaluated by implementing the defects created at the grain boundaries of the polycrystalline CdS and CIGS material and at the interface CdS/CIGS.The J-V characteristics and the external quantum efficiency EQE are simulated under AM 1.5 illumination. The conversion efficiency  of 20.35% is reached and the other characteristic parameters are simulated: the short circuit current density J equals 35.62 mA/cm , the open circuit voltage V is of 0.69 Vand the fill factor FF is of 82.7 %. The calculated external parameters of the solar cell are in good agreement with the measured characteristics. The simulation results also showed that the rise of the CdS thickness decreases all output parameters and the external quantum efficiencywhile the rise of the CIGS thickness improves all photovoltaic parameters and the external quantum efficiency. The highest efficiency of 21.08 % is reached for the CIGS thickness of 5 μm. Thu, 03 Mar 2016 00:00:00 GMT http://archives.univ-biskra.dz/handle/123456789/7358 2016-03-03T00:00:00Z http://archives.univ-biskra.dz/handle/123456789/7357 Titre: Numerical simulation of radiation damage on the device performance of GaAs MESFETs Auteur(s): Y. Beddiafi; A. Saadoune; L. Dehimi Résumé: Abstract In this work, the effect of the radiation on the current-voltage characteristics of device GaAs metal Schottky field effect transistors (MESFET) at room temperature is investigated. Numerical Simulation tuned by means of a physics based device simulator. When the substrate of this transistor is subjected to radiations, structural defects, which are created, have undesirable effects and can degrade the performance of the transistors. These defects appear like deep traps. Results showed that in the presence of donor traps the current-voltage characteristics increases. However, acceptor traps have a significant effect on the current-voltage characteristics. In the presence of acceptor traps, the space charge zone in the channel increases, hence, reduces the current drain. Thu, 03 Mar 2016 00:00:00 GMT http://archives.univ-biskra.dz/handle/123456789/7357 2016-03-03T00:00:00Z http://archives.univ-biskra.dz/handle/123456789/7356 Titre: ELECTRICAL CHARACTERIZATION OF THE FORWARD CURRENT- VOLTAGE OF AL IMPLANTED 4H-SIC PIN DIODES Auteur(s): M.L. MEGHERBI; L. DEHIMI; A.SAADOUNE; W. TERGHINI; F. PEZZIMENTI; F.G. DELLA CORTE Résumé: ABSTRACT In this work,theforward current-voltagecharacteristics of n-type Al implanted 4H-SiC pin diodeshave been investigated experimentally and by mean of numerical simulations in the 298-378K temperature range. Our simulations were performed using proprietary simulations software. The model parameters to be calibrated in the simulation are the electron and hole minority carriers lifetimes.The measured forward I-V characteristics showed two differentbehaviour, the leaky behaved and well behaved diode. The later diodes were considered for simulation comparison.Employing temperature-dependent carrier lifetimes as a fitting parameter, the simulation indicates that drift layer and bulk carrier lifetime ranging from 10ns to 50ns. We achieved a good agreement between simulations and measured data. The measured and the simulated forward characteristics indicate an ideality factor of about1.3for the region 2.5V-2.78Vand 2.14 in the low injection region. Activation energies of about 1.61eV and 2.51eVare obtained respectively which are in good agreement with the expected values. Thu, 03 Mar 2016 00:00:00 GMT http://archives.univ-biskra.dz/handle/123456789/7356 2016-03-03T00:00:00Z