Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorMAROUF, Yacine-
dc.description.abstractFor over a decade, the III-V materials are intensively studied for optoelectronic applications in the UV and blue. In 2003, the energy gap of InN is lowered to 0.7 eV paving the way for alloys can cover almost the entire solar spectrum. In particular, the InGaN alloy was extensively studied for photovoltaic applications due to its wide spectral coverage, its good electrical properties and resistance to high powers. In this context, we studied the operation of photovoltaic cells based on InGaN by two-dimensional numerical simulation under illumination with AM1.5 spectrum performed under SILVACO / ATLAS. We define a reference cell with a set of physical parameters, in order to analyze their influence on the conversion efficiency. Thus, several parameters are considered: Doping and dimensions of n and p regions of the cell, as well as doping and sizing window and BSF layers.en_US
dc.subjectIndium Gallium Nitrideen_US
dc.subjectsolars cellsen_US
dc.subjectnumerical simulationen_US
dc.titleModélisation des cellules solaires en InGaN en utilisant Atlas Silvacoen_US
Appears in Collections:Département de Génie Electrique

Files in This Item:
File Description SizeFormat 
modelisation_des_cellules_solaires_en_ingan_en_utilisant_atlas_silvaco.pdf4,36 MBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.