Please use this identifier to cite or link to this item: http://archives.univ-biskra.dz/handle/123456789/17836
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dc.contributor.authorDakoumi Halima-
dc.date.accessioned2021-04-20T07:24:24Z-
dc.date.available2021-04-20T07:24:24Z-
dc.date.issued2020-06-20-
dc.identifier.urihttp://archives.univ-biskra.dz/handle/123456789/17836-
dc.language.isofren_US
dc.titleInfluence de la température et du dopage sur les caractéristiques d’un transistor DIMOSFET en carbure de silicium.en_US
dc.title.alternativeRéseaux et Télécommunicationsen_US
dc.typeMasteren_US
Appears in Collections:Faculté des Sciences et de la technologie (FST)

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