A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device

Please use this identifier to cite or link to this item: http://archives.univ-biskra.dz/handle/123456789/2317

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DC Field	Value	Language
dc.contributor.author	Z. Hamaizia	-
dc.contributor.author	N. Sengouga	-
dc.contributor.author	M. Missous	-
dc.contributor.author	M.C.E. Yagoub	-
dc.date.accessioned	2013-04-16T10:54:18Z	-
dc.date.available	2013-04-16T10:54:18Z	-
dc.date.issued	2013-04-16	-
dc.identifier.uri	http://archives.univ-biskra.dz/handle/123456789/2317	-
dc.description.abstract	In this work, the design of a novel low-noise amplifier (LNA) based on 1 μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radioastronomy applications, this amplifier exploits a common-drain configuration as input stage and a common-source inductive degeneration topology as output stage. It exhibits a maximum gain of 30 dB within an input 1 dB compression point of −16 dBm. The noise figure is 0.4 dB with an input return loss greater than −10 dB and an output return loss of −12.5 dB. The LNA consumes 85 mW from a 1.5 V power supply. Link http://www.sciencedirect.com/science/article/pii/S1369800110000934	en_US
dc.language.iso	en	en_US
dc.subject	HEMT; LNA; SKA; SKADS; Telescope.	en_US
dc.title	A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device	en_US
dc.type	Article	en_US
Appears in Collections:	Publications Internationales

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