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http://archives.univ-biskra.dz/handle/123456789/2335| Title: | Small signal modeling of pHEMTs and analysis of their microwave performance |
| Authors: | Z. Hamaizia N. Sengouga M. Missous M.C.E. Yagoub |
| Keywords: | pHEMT, extraction, small signal modeling, LANs, GaAs FET, Canada |
| Issue Date: | 18-Apr-2014 |
| Abstract: | Accurate extraction of the small-signal equivalent circuit of GaAs microwave Field Effect Transistors (GaAs FET) is crucial for efficient design of microwave analog circuits such as Low Noise Amplifiers (LNAs). This study proposed an improved direct analytical extraction procedure. Its efficiency was demonstrated through the characterisation of two 1 μm gate-length pseudomorphic heterojonction transistors. Link http://docsdrive.com/pdfs/medwelljournals/jeasci/2010/252-256.pdf |
| URI: | http://archives.univ-biskra.dz/handle/123456789/2335 |
| Appears in Collections: | Publications Internationales |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| The Alx Ga1−x As window composition effect on the hardness improvement of a p+–n–n+GaAs solar cell exposed to the electron irradiation_p.pdf | 333,1 kB | Adobe PDF | View/Open |
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