Small-signal  modeling  of  pHEMTs  and  analysis  of  their  microwave  Performances

Please use this identifier to cite or link to this item: http://archives.univ-biskra.dz/handle/123456789/2363

Full metadata record

DC Field	Value	Language
dc.contributor.author	Z. Hamaizia	-
dc.contributor.author	N. Sengouga	-
dc.contributor.author	M. Missous	-
dc.date.accessioned	2014-04-18T12:14:57Z	-
dc.date.available	2014-04-18T12:14:57Z	-
dc.date.issued	2014-04-18	-
dc.identifier.uri	http://archives.univ-biskra.dz/handle/123456789/2363	-
dc.description.abstract	Accurate extraction of the small-signal equivalent circuit of GaAs microwave Field Effect Transistors (GaAs FET) is crucial for efficient design of microwave analog circuits such as Low Noise Amplifiers (LNAs). This study proposed an Improved direct analytical extraction procedure Its efficiency was demonstrated through the characterisation of two 1 µm gate-length pseudomorphic heterojonction transistors. Link http://www.univ-biskra.dz/courrierdusavoir/Revue_10/8-%20Hemaizia.pdf	en_US
dc.language.iso	en	en_US
dc.subject	pHEMT, extraction, small signal modeling, LANs, GaAs FET, Canada.	en_US
dc.title	Small-signal modeling of pHEMTs and analysis of their microwave Performances	en_US
dc.type	Article	en_US
Appears in Collections:	Publications Nationales

Files in This Item:

File	Description	Size	Format
Small-signal modeling of pHEMTs and analysis of their microwave performances.pdf		35,93 kB	Adobe PDF	View/Open