Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorA F Meftah-
dc.contributor.authorN Sengouga-
dc.contributor.authorA Belghachi-
dc.contributor.authorA M Meftah-
dc.description.abstractIn this paper, we report a detailed numerical study of the electron irradiation effect on the photoelectrical parameters of a GaAs based p+–n–n+ solar cell which operates under an AM0 solar spectrum. As a consequence of irradiation different types of defects are created in the semiconductor lattice. These defects introduce energy levels in the gap of the material. The majority of studies dealing with irradiation-induced degradation in solar cells relate it mainly to recombination centres, which are deep levels lying near the mid gap. In the present study, numerical simulation is used to demonstrate that the irradiation-induced degradation is not solely due to recombination centres. Other less deep levels, or traps, play a major role in this degradation. When only recombination centres are taken into account, the short circuit current density (Jsc) is hardly affected while the other cell output parameters such as the open circuit voltage (Voc), the conversion efficiency (η) and the fill factor (FF) are strongly deteriorated. However, if less deep levels or traps are taken into account together with recombination centres, Jsc becomes sensitive to electron irradiation and the other output parameter deteriorations become less sensitiveen_US
dc.titleNumerical simulation of the effect of recombination centres and traps created by electron irradiation on the performance degradation of GaAs solar cellsen_US
Appears in Collections:Publications Internationales

Files in This Item:
File Description SizeFormat 
article_cm9_21_215802.pdf436,46 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.