Please use this identifier to cite or link to this item:
http://archives.univ-biskra.dz/handle/123456789/28233Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | BASSI OUAFA | - |
| dc.date.accessioned | 2023-12-13T07:27:15Z | - |
| dc.date.available | 2023-12-13T07:27:15Z | - |
| dc.date.issued | 2023-06-20 | - |
| dc.identifier.uri | http://archives.univ-biskra.dz/handle/123456789/28233 | - |
| dc.language.iso | en | en_US |
| dc.title | Étude et simulation des propriétés optoélectroniques d’une diode électroluminescente (LED) de structure p-GaN/AlGaN/InGaN/ n-GaN à puits quantiques | en_US |
| dc.title.alternative | فيزياء | en_US |
| dc.type | Master | en_US |
| Appears in Collections: | Faculté des Sciences Exactes et des Sciences de la Nature et de la Vie (FSESNV) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Bassi_Ouafa.pdf | 3,84 MB | Adobe PDF | View/Open |
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