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Please use this identifier to cite or link to this item: http://archives.univ-biskra.dz/handle/123456789/28233
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dc.contributor.authorBASSI OUAFA-
dc.date.accessioned2023-12-13T07:27:15Z-
dc.date.available2023-12-13T07:27:15Z-
dc.date.issued2023-06-20-
dc.identifier.urihttp://archives.univ-biskra.dz/handle/123456789/28233-
dc.language.isoenen_US
dc.titleÉtude et simulation des propriétés optoélectroniques d’une diode électroluminescente (LED) de structure p-GaN/AlGaN/InGaN/ n-GaN à puits quantiquesen_US
dc.title.alternativeفيزياءen_US
dc.typeMasteren_US
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