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Results 1-10 of 11 (Search time: 0.018 seconds).
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Issue DateTitleAuthor(s)
29-Feb-2016Irradiation effect on the electrical characteristics of an AlGaAs/GaAs based solar cell: Comparison between electron and proton irradiation by numerical simulationW. Laiadi; Af. Meftah; N. Sengouga
29-Feb-2016Modeling of Semiconductor Detectors Made of Defect-Engineered Silicon: The Effective Space Charge DensityA. Saadoune; S. J. Moloi; K. Bekhouche; L. Dehimi; M. McPherson; N. Sengouga; B. K. Jones
29-Feb-2016Numerical simulation of the type inversion in n+-p-p+ Si solar cells, used for space applications, under 1 MeV electron irradiationA.Hamache; N. Sengouga; Af. Meftah
29-Feb-2016Modeling of Semiconductor Detectors Made of Defect-Engineered Silicon: The Effective Space Charge DensityA. Saadoune; S. J. Moloi; K. Bekhouche; L. Dehimi; M. McPherson; N. Sengouga; B. K. Jones
27-Feb-2016Computer modelling and analysis of the photodegradation effect in a-Si:H p–i–n solar cellA.F Bouhdjar; L. Ayat; AM. Meftah; N. Sengouga; AF. Meftah
27-Feb-2016Numerical simulation of bias and photo stress on indium-gallium-zinc-oxide thin film transistorsM. Adaika; Af Meftah; N. Sengouga; M. Henini
28-Feb-2016Deep traps and temperature effects on the capacitance of p-type Si-doped GaAs Schottky diodes on (211) and (311) oriented GaAs substratesR. Boumaraf; N. Sengouga; R.H. Mari; Af. Meftah; M. Aziz; Dler Jameel; Noor Al Saqri; D. Taylor; M. Henini
28-Feb-2016Numericalsimulationoftheresponseofsubstratetraps to avoltageappliedtothegateofagalliumarsenidefield effecttransistorN. Sengouga; Af.Meftah; Am.Meftah; M.Henini
28-Feb-2016Numerical simulation of the effect of gold doping on the resistance to neutron irradiation of silicon diodesK. Bekhouche; N. Sengouga; B. K. Jones
27-Feb-2016Modeling the effect of defects on the performance of an n-CdO/p-Si solar cellS. Chala; N. Sengouga; F. Yakuphanoglu