Please use this identifier to cite or link to this item:
http://archives.univ-biskra.dz/handle/123456789/7263Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Tobbeche Souad | - |
| dc.contributor.author | Merazga Amar | - |
| dc.date.accessioned | 2016-02-27T14:45:56Z | - |
| dc.date.available | 2016-02-27T14:45:56Z | - |
| dc.date.issued | 2016-02-27 | - |
| dc.identifier.uri | http://archives.univ-biskra.dz/handle/123456789/7263 | - |
| dc.description.abstract | In this paper we developed a recombination model for the steady state photoconductivity (SSP) with the assumption that the correlated dangling bond states (DB) act as the essential recombination centres and the electron recombination proceeds by tunneling from the conduction band tail states (TS) for n-type a-Si:H. The modeled temperature dependence of the SSP presents the main measured features, particularly the small activation energy and the thermal quenching | en_US |
| dc.language.iso | en | en_US |
| dc.subject | Keywords: DOS - a-Si:H - steady state photoconductivity - tunneling - recombination | en_US |
| dc.title | Tunneling recombination mechanism in n-type a-Si:H steady state regime | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Publications Internationales | |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.