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http://archives.univ-biskra.dz/handle/123456789/7266
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DC Field | Value | Language |
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dc.contributor.author | NouredineSengouga | - |
dc.contributor.author | RamiBoumaraf | - |
dc.contributor.author | RiazH.Mari | - |
dc.contributor.author | AfakMeftah | - |
dc.contributor.author | Dler Jameel | - |
dc.contributor.author | NoorAlSaqri | - |
dc.contributor.author | MohsinAzziz | - |
dc.contributor.author | DavidTaylor | - |
dc.contributor.author | MohamedHenini | - |
dc.date.accessioned | 2016-02-27T14:53:28Z | - |
dc.date.available | 2016-02-27T14:53:28Z | - |
dc.date.issued | 2016-02-27 | - |
dc.identifier.uri | http://archives.univ-biskra.dz/handle/123456789/7266 | - |
dc.description.abstract | Numericalsimulation,usingSILVACO-TCAD,iscarriedouttoexplainexperimentally observedeffectsofdifferenttypesofdeeplevelsonthecapacitance–voltagecharacter- isticsofp-typeSi-dopedGaAsSchottkydiodesgrownonhighindexGaAssubstrates.Two diodesweregrownon(311)Aand(211)AorientedGaAssubstratesusingMolecularBeam Epitaxy(MBE).Although,deeplevelswereobservedinbothstructures,themeasured capacitance–voltagecharacteristicsshowanegativedifferentialcapacitance(NDC)forthe (311)Adiodes,whilethe(211)Adevicesdisplayausualbehaviour.TheNDCisrelatedto the natureandspatialdistributionofthedeeplevels,whicharecharacterizedbytheDeep LevelTransientSpectroscopy(DLTS)technique.Inthe(311)Astructureonlymajoritydeep levels(holetraps)wereobservedwhilebothmajorityandminoritydeeplevelswere present inthe(211)Adiodes.Thesimulation,whichcalculatesthecapacitance–voltage characteristics intheabsenceandpresenceofdifferenttypesofdeeplevels,agreeswell withtheexperimentallyobservedbehaviour. | en_US |
dc.language.iso | en | en_US |
dc.subject | Keywords: High indexGaAs Negativedifferentialcapacitance:deep levels SILVACOsimulation | en_US |
dc.title | Modeling theeffectofdeeptrapsonthecapacitance–voltage characteristicsofp-typeSi-dopedGaAsSchottkydiodes grownonhighindexGaAssubstrates | en_US |
dc.type | Article | en_US |
Appears in Collections: | Publications Internationales |
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11 B-I.pdf | 1,13 MB | Adobe PDF | View/Open |
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