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http://archives.univ-biskra.dz/handle/123456789/7362Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | N.A. Abdeslam | - |
| dc.contributor.author | S. Asadi | - |
| dc.contributor.author | N. Sengouga | - |
| dc.contributor.author | M.C.E. Yagoub | - |
| dc.date.accessioned | 2016-03-03T11:52:05Z | - |
| dc.date.available | 2016-03-03T11:52:05Z | - |
| dc.date.issued | 2016-03-03 | - |
| dc.identifier.uri | http://archives.univ-biskra.dz/handle/123456789/7362 | - |
| dc.description.abstract | In this paper, a reliable small-signal time-domain FET modeling approach is proposed. Based on physical/electrical parameters, the proposed model can efficiently characterize high-frequency transistors. | en_US |
| dc.language.iso | en | en_US |
| dc.subject | Index Terms— FDTD, MESFET, time domain, wave effects | en_US |
| dc.title | SMALL-SIGNAL TIME-DOMAIN PHYSICAL/ELECTRICAL FET MODELING APPROACH | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Communications Internationales | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 27 C-I.pdf | 737,24 kB | Adobe PDF | View/Open |
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