Please use this identifier to cite or link to this item: http://archives.univ-biskra.dz/handle/123456789/7372
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dc.contributor.authorW. TERGHINI-
dc.contributor.authorA. SAADOUNE-
dc.contributor.authorL. DEHIMI-
dc.contributor.authorM.L. MEGHERBI-
dc.contributor.authorS. ÖZÇELIKC-
dc.date.accessioned2016-03-04T21:12:30Z-
dc.date.available2016-03-04T21:12:30Z-
dc.date.issued2016-03-04-
dc.identifier.urihttp://archives.univ-biskra.dz/handle/123456789/7372-
dc.description.abstractIn this work, we report measured forward current voltage characteristics of AuGeNi/p-Si schottky barrier diode in the temperature range of 295-400 °K. Forward current voltage characteristics were investigated. This investigation is based on the analysis of the dependency of extracted parameters such as ideality factor (η), barrier height ( ) and saturation current ( ) on temperature. The Richardson coefficient was examined by means of the saturation versus temperature. While η decreases, ØB0 increases with increasing temperature. Obtained Richardson constant value of the A*=11.5 x10-7Acm-2K-2 is very low compared to the standard value. The modified Richardson plot has given mean barrier height and Richardson constant (A*) as 1.15 eV and 30.53 Am-2K-2, respectively. The temperature dependence of the I–V characteristics of the AuGeNi/p-Si Schottky diode have been successfully explained on the basis of thermionic emission (TE) mechanism with Gaussian distribution of the Schottky barrier heights (SBHs).en_US
dc.language.isoenen_US
dc.subjectSchottky contacts, current-voltage-temperature characteristics, Gaussian distribution, Barrier inhomogeneityen_US
dc.titleMEASUREMENT AND ANALYSIS OF I-V-T CHARACTERISTICS OF A AUGENI/P-SI SCHOTTKY BARRIER DIODEen_US
dc.typeArticleen_US
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