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Browsing by Author N. Sengouga
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Showing results 12 to 30 of 30
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Issue Date
Title
Author(s)
29-Feb-2016
Modeling of Semiconductor Detectors Made of Defect-Engineered Silicon: The Effective Space Charge Density
A. Saadoune
;
S. J. Moloi
;
K. Bekhouche
;
L. Dehimi
;
M. McPherson
;
N. Sengouga
;
B. K. Jones
29-Feb-2016
Modeling of Semiconductor Detectors Made of Defect-Engineered Silicon: The Effective Space Charge Density
A. Saadoune
;
S. J. Moloi
;
K. Bekhouche
;
L. Dehimi
;
M. McPherson
;
N. Sengouga
;
B. K. Jones
19-May-2014
Modeling of Semiconductor Detectors Made of Defect-Engineered Silicon: The Effective Space Charge Density
A. Saadoune
;
S. J. Moloi
;
K. Bekhouche
;
L. Dehimi
;
M. McPherson
;
N. Sengouga
;
B. K. Jones
3-Mar-2016
Modeling the effect of defects on the performance of an n-CdO/p-Si solar cell
S. Chala
;
N. Sengouga
;
F. Yakuphanoglu
27-Feb-2016
Modeling the effect of defects on the performance of an n-CdO/p-Si solar cell
S. Chala
;
N. Sengouga
;
F. Yakuphanoglu
19-May-2014
Modelling of semiconductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: The capacitance–voltage characteristics
A. Saadoune
;
L. Dehimi
;
N. Sengouga
;
M. McPherson
;
B.K. Jones
19-May-2014
Modellingof semi-conductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: the current–voltage characteristics
L. Dehimi
;
N. Sengouga
;
B.K. Jones
27-Feb-2016
Numerical simulation of bias and photo stress on indium-gallium-zinc-oxide thin film transistors
M. Adaika
;
Af Meftah
;
N. Sengouga
;
M. Henini
3-Mar-2016
Numerical simulation of bias and photo stress on indium-gallium-zinc-oxide thin film transistors
M. Adaika
;
Af Meftah
;
N. Sengouga
;
M. Henini
28-Feb-2016
Numerical simulation of the effect of gold doping on the resistance to neutron irradiation of silicon diodes
K. Bekhouche
;
N. Sengouga
;
B. K. Jones
19-May-2014
Numerical simulation of the effect of the Al molar fraction and thickness of an AlxGa1 xAs window on the sensitivity of a pþ–n–nþ GaAs solar cell to 1 MeV electron irradiation
A.F. Meftah
;
N. Sengouga
;
A.M. Meftah
;
S. Khelifi
27-Feb-2016
Numerical simulation of the effect of the free carrier motilities on light-soaked a-Si:H p–i–n solar cell
L. Ayat
;
A. F. Bouhdjar
;
AF. Meftah
;
N. Sengouga
19-May-2014
Numerical simulation of the response of substrate traps to a voltage applied to the gate of a gallium arsenide field effect transistor
N. Sengouga
;
Af.Meftah
;
Am.Meftah
;
M.Henini
29-Feb-2016
Numerical simulation of the type inversion in n+-p-p+ Si solar cells, used for space applications, under 1 MeV electron irradiation
A.Hamache
;
N. Sengouga
;
Af. Meftah
3-Mar-2016
Numerical simulation of the type inversion in n+-p-p+ Si solar cells, used for space applications, under 1 MeV electron irradiation
A.Hamache
;
N. Sengouga
;
Af. Meftah
28-Feb-2016
Numericalsimulationoftheresponseofsubstratetraps to avoltageappliedtothegateofagalliumarsenidefield effecttransistor
N. Sengouga
;
Af.Meftah
;
Am.Meftah
;
M.Henini
18-Apr-2014
Small signal modeling of pHEMTs and analysis of their microwave performance
Z. Hamaizia
;
N. Sengouga
;
M. Missous
;
M.C.E. Yagoub
18-Apr-2014
Small signal modeling of pHEMTs and analysis of their microwave performance
Z. Hamaizia
;
N. Sengouga
;
M. Missous
;
M.C.E. Yagoub
3-Mar-2016
SMALL-SIGNAL TIME-DOMAIN PHYSICAL/ELECTRICAL FET MODELING APPROACH
N.A. Abdeslam
;
S. Asadi
;
N. Sengouga
;
M.C.E. Yagoub