Modélisation d’un transistor MESFET en GaAs en utilisant le simulateur atlas-silvaco

Abstract

The field effect transistor Schottky barrier gallium arsenide noted GaAs MESFET is one of major components used in electronic devices. This work aims to simulate numerically the influence of technological parameters such as gate length, thickness and channel doping and the effect of donor and acceptor traps in the substrate on the current-voltage characteristics using Silvaco Atlas simulator, Technical Computer Aided Design (TCAD). In the presence of donor traps no effect is observed on the current-voltage characteristics. However acceptor traps have a significant effect on the current-voltage characteristics. The results showed that in the presence of acceptor traps the space charge zone in the channel increases which reduces the current drain. Thus the results obtained are in good agreement with the existing results.