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http://archives.univ-biskra.dz/handle/123456789/5134Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Naceur, Soufyane | - |
| dc.date.accessioned | 2014-12-22T12:27:40Z | - |
| dc.date.available | 2014-12-22T12:27:40Z | - |
| dc.date.issued | 2014-12-22 | - |
| dc.identifier.uri | http://archives.univ-biskra.dz/handle/123456789/5134 | - |
| dc.description.abstract | Gallium Nitride (GaN) is used as an absorbent layer in multijunction cells. Thes solar cells are mainly used in space because the yhave agreat resistance to cosmi radiation high-energy (MeV) thanks to the direct and wide energy gap. The onl drawbackinthis solar cell isweakphoto-current, which affects the overall current of th multijunction solar cell. In this work we study the effect of increasing the proportio ofindium(In)which replaces Ga on the solar cell properties. The goal is to improve th photocurrent to be used in multijunction solar cells based on p-InxGa1-xN/n-InxGa1-xN junction. It was found thatthe proportion ofindium(x = 0.78)greatercurrent(13.51m A). However other parameters are degraded. | en_US |
| dc.language.iso | en | en_US |
| dc.subject | Gallium Nitride | en_US |
| dc.subject | solar cell (pn) | en_US |
| dc.subject | simulation (Silvaco/Atlas) | en_US |
| dc.title | Simulation of Gallium Nitride (GaN) solar cell by SILVACO-ATLAS | en_US |
| dc.type | Thesis | en_US |
| Appears in Collections: | Faculté des Sciences Exactes et des Sciences de la Nature et de la Vie (FSESNV) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Simulation of Gallium Nitride (GaN) solar cell by SILVACO-ATLAS.PDF | 1,83 MB | Adobe PDF | View/Open |
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