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http://archives.univ-biskra.dz/handle/123456789/613| Title: | SMALL-SIGNAL MODELING OF PHEMTS AND ANALYSIS OF THEIR MICROWAVE PERFORMANCE |
| Authors: | HEMAIZIA, Z SENGOUGA, N MISSOUS, M |
| Keywords: | small signal modelling pHEMT extraction |
| Issue Date: | 30-Dec-2013 |
| Abstract: | Accurate extraction of the small-signal equivalent circuit elements of pseudomorphic high electron mobility transistors (pHEMT) is crucial for the design of microwave analog circuits such as low noise amplifiers (LNAs). This paper presents a direct analytical extraction procedure. Its efficiency is demonstrated on two different 1μm gate-length novel high breakdown InGaAs/InAlAs pHEMTs: one is grown on a GaAs while the other is on an InP substrate. |
| URI: | http://archives.univ-biskra.dz/handle/123456789/613 |
| Appears in Collections: | CS N 10 |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 8- Hemaizia.pdf | 1,04 MB | Adobe PDF | View/Open |
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