Please use this identifier to cite or link to this item: http://archives.univ-biskra.dz/handle/123456789/7243
Full metadata record
DC FieldValueLanguage
dc.contributor.authorW. TERGHINI-
dc.contributor.authorA. SAADOUNE-
dc.contributor.authorL. DEHIMI-
dc.contributor.authorM.L. MEGHERBI-
dc.contributor.authorS. ÖZÇELIKC-
dc.date.accessioned2016-02-23T13:07:17Z-
dc.date.available2016-02-23T13:07:17Z-
dc.date.issued2016-02-23-
dc.identifier.issn1112-3338-
dc.identifier.urihttp://archives.univ-biskra.dz/handle/123456789/7243-
dc.description.abstractABSTRACT In this work, we report measured forward current voltage characteristics of AuGeNi/p-Si schottky barrier diode in the temperature range of 295-400 °K. Forward current voltage characteristics were investigated. This investigation is based on the analysis of the dependency of extracted parameters such as ideality factor (η), barrier height ( ) and saturation current ( ) on temperature. The Richardson coefficient was examined by means of the saturation versus temperature. While η decreases, ØB0 increases with increasing temperature. Obtained Richardson constant value of the A*=11.5 x10-7Acm-2K-2 is very low compared to the standard value. The modified Richardson plot has given mean barrier height and Richardson constant (A*) as 1.15 eV and 30.53 Am-2K-2, respectively. The temperature dependence of the I–V characteristics of the AuGeNi/p-Si Schottky diode have been successfully explained on the basis of thermionic emission (TE) mechanism with Gaussian distribution of the Schottky barrier heights (SBHs).en_US
dc.language.isofren_US
dc.subjectKEYWORDS: Schottky contacts, current-voltage-temperature characteristics, Gaussian distribution, Barrier inhomogeneityen_US
dc.titleMEASUREMENT AND ANALYSIS OF I-V-T CHARACTERISTICS OF A AUGENI/P-SI SCHOTTKY BARRIER DIODEen_US
dc.typeArticleen_US
Appears in Collections:CS N 19

Files in This Item:
File Description SizeFormat 
ARTICLE_7.pdf247,49 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.