Please use this identifier to cite or link to this item: http://archives.univ-biskra.dz/handle/123456789/7246
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dc.contributor.authorM.L. MEGHERBI-
dc.contributor.authorL. DEHIMI-
dc.contributor.authorA.SAADOUNE-
dc.contributor.authorW. TERGHINI-
dc.contributor.authorF. PEZZIMENTI-
dc.contributor.authorF.G. DELLA CORTE-
dc.date.accessioned2016-02-23T13:21:37Z-
dc.date.available2016-02-23T13:21:37Z-
dc.date.issued2016-02-23-
dc.identifier.issn1112-3338-
dc.identifier.urihttp://archives.univ-biskra.dz/handle/123456789/7246-
dc.description.abstractABSTRACT In this work,theforward current-voltagecharacteristics of n-type Al implanted 4H-SiC pin diodeshave been investigated experimentally and by mean of numerical simulations in the 298-378K temperature range. Our simulations were performed using proprietary simulations software. The model parameters to be calibrated in the simulation are the electron and hole minority carriers lifetimes.The measured forward I-V characteristics showed two differentbehaviour, the leaky behaved and well behaved diode. The later diodes were considered for simulation comparison.Employing temperature-dependent carrier lifetimes as a fitting parameter, the simulation indicates that drift layer and bulk carrier lifetime ranging from 10ns to 50ns. We achieved a good agreement between simulations and measured data. The measured and the simulated forward characteristics indicate an ideality factor of about1.3for the region 2.5V-2.78Vand 2.14 in the low injection region. Activation energies of about 1.61eV and 2.51eVare obtained respectively which are in good agreement with the expected values.en_US
dc.language.isoenen_US
dc.subjectKEYWORDS: p-i-n diode, silicon carbide, silvaco, device simulation, lifetimes.en_US
dc.titleELECTRICAL CHARACTERIZATION OF THE FORWARD CURRENTVOLTAGE OF AL IMPLANTED 4H-SIC PIN DIODESen_US
dc.typeArticleen_US
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