Please use this identifier to cite or link to this item: http://archives.univ-biskra.dz/handle/123456789/7266
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dc.contributor.authorNouredineSengouga-
dc.contributor.authorRamiBoumaraf-
dc.contributor.authorRiazH.Mari-
dc.contributor.authorAfakMeftah-
dc.contributor.authorDler Jameel-
dc.contributor.authorNoorAlSaqri-
dc.contributor.authorMohsinAzziz-
dc.contributor.authorDavidTaylor-
dc.contributor.authorMohamedHenini-
dc.date.accessioned2016-02-27T14:53:28Z-
dc.date.available2016-02-27T14:53:28Z-
dc.date.issued2016-02-27-
dc.identifier.urihttp://archives.univ-biskra.dz/handle/123456789/7266-
dc.description.abstractNumericalsimulation,usingSILVACO-TCAD,iscarriedouttoexplainexperimentally observedeffectsofdifferenttypesofdeeplevelsonthecapacitance–voltagecharacter- isticsofp-typeSi-dopedGaAsSchottkydiodesgrownonhighindexGaAssubstrates.Two diodesweregrownon(311)Aand(211)AorientedGaAssubstratesusingMolecularBeam Epitaxy(MBE).Although,deeplevelswereobservedinbothstructures,themeasured capacitance–voltagecharacteristicsshowanegativedifferentialcapacitance(NDC)forthe (311)Adiodes,whilethe(211)Adevicesdisplayausualbehaviour.TheNDCisrelatedto the natureandspatialdistributionofthedeeplevels,whicharecharacterizedbytheDeep LevelTransientSpectroscopy(DLTS)technique.Inthe(311)Astructureonlymajoritydeep levels(holetraps)wereobservedwhilebothmajorityandminoritydeeplevelswere present inthe(211)Adiodes.Thesimulation,whichcalculatesthecapacitance–voltage characteristics intheabsenceandpresenceofdifferenttypesofdeeplevels,agreeswell withtheexperimentallyobservedbehaviour.en_US
dc.language.isoenen_US
dc.subjectKeywords: High indexGaAs Negativedifferentialcapacitance:deep levels SILVACOsimulationen_US
dc.titleModeling theeffectofdeeptrapsonthecapacitance–voltage characteristicsofp-typeSi-dopedGaAsSchottkydiodes grownonhighindexGaAssubstratesen_US
dc.typeArticleen_US
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