Simulation Numérique d’une cellule solaire en silicium amorphe hydrogéné (a-Si :H)

Abstract

The work of this memory is a numerical simulation study of a hydrogenated amorphous silicon solar cell (a-Si: H) of a p-i-n structure using the SILVACO-TCAD simulator. We extracted the external parameters of the studied solar cell: the current density-voltage characteristic (J-V), the short-circuit current density Jsc, the open-circuit voltage Voc, feel factor FF, and the conversion efficiency . We have tried to understand the photocell behavior of this solar cell, analyzing the profile of internal parameters such as electric field and recombination rate. Our simulation was made to optimize the solar cell in the singular configuration. As a result, the thickness of the intrinsic layer (i) has an influence on the conversion efficiency, the doping concentrations of the p and n type layers have a negligible effect on the performance of the cell, and the mobility’s load carriers have an influence on the conversion efficiency when we take into consideration the experimental results of other research. The optimal obtained efficiencies is 11.23%.