Please use this identifier to cite or link to this item:
Title: Properties of thin-film silicon solar cells at very high irradiance
Authors: Steve Reynolds
Suman Anand
Amjad Meftah
Vladimir Smirnov
Keywords: Amorphous silicon; Microcrystalline silicon; Solar cells; Staebler–Wronski effect; Computer modelling.
Issue Date: 18-Apr-2014
Abstract: The focussed beam of a low-power helium–neon laser is used to study accelerated light-induced degradation (Staebler–Wronski effect) and high steady-state photocarrier generation rates in amorphous and microcrystalline silicon thin-film solar cells, at up to 13 MW m− 2 irradiance. Even at these high power densities, COMSOL® simulations indicate that heat diffusion into the substrate, aided by spreading conduction via the Ag back-contact, restricts the temperature rise to less than 14 °C. Short-circuit current may be measured directly, and the I–V characteristic estimated by taking into account shunting by the inactive part of the cell. The improved resistance to degradation of microcrystalline silicon cells is shown to persist to high irradiance. Computer simulations of an amorphous silicon solar cell are presented that are consistent with measured un-degraded and degraded properties, and offer insight into prevailing defect creation processes and carrier recombination mechanisms. Link
Appears in Collections:Publications Internationales

Files in This Item:
File Description SizeFormat 
Properties of thin-film silicon solar cells at very high irradiance.pdf36,01 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.