Conception des dispositifs optoélectroniques à base d’oxyde de cuivre

Abstract

This work aims to design optoelectronic devices based on copper oxide made by depositing a transparent layer of conductive oxide ZnO: Ga (TCO) and Cu2O as an absorbent layer. Good quality Cu2O films were coated on TCO films prepared by pyrolytic ultrasonic spraying on glass substrates. These devices represent a good starting point for the development of solar cells at very low cost. Several techniques have been used to characterize the thin films of ZnO: Ga and Cu2O. The optical properties of the deposited layers were analyzed by UV-visible spectrophotometry. P-type binary CuxOy semiconductor thin films for various oxygen flow rates (PO2) and total pressure of 0.5 Pa (Pt) were prepared using the reactive magnetron sputtering process. The increased PO2 revealed the three phases of copper oxide (CuO, Cu2O and Cu4O3). Their morphologies and structures have been revealed by X-ray diffraction and SEM. XRD characterizations indicate the presence of all copper oxide phases (CuO, Cu2O and Cu4O3). Additionally, atomic force microscopy is used to inspect the morphology and roughness of films by root mean square (RMS). The morphology gives a picture of the shape and size of the grains to complement the AFM results. Optical characterization by UV-vsible indicates reduced transmittance and bandgaps with increased oxygen pressure. Electrical characterizations revealed the decrease in resistivity of thin films of Cu2O, Cu4O3 and CuO.