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Please use this identifier to cite or link to this item: http://archives.univ-biskra.dz/handle/123456789/26208
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dc.contributor.authorLAZNEK, Samira-
dc.date.accessioned2023-05-21T12:59:15Z-
dc.date.available2023-05-21T12:59:15Z-
dc.date.issued2007-
dc.identifier.urihttp://archives.univ-biskra.dz/handle/123456789/26208-
dc.language.isofren_US
dc.titleModélisation Quantique d’un Transistor à Effet de Champ Hétéro-Jonction à Base SiGe par la Méthode des Volumes Finisen_US
dc.typeThesisen_US
Appears in Collections:Sciences de la Matière

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