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http://archives.univ-biskra.dz/handle/123456789/2708
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DC Field | Value | Language |
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dc.contributor.author | Z. Hamaizia | - |
dc.contributor.author | N. Sengouga | - |
dc.contributor.author | M. Missous | - |
dc.contributor.author | M.C.E. Yagoub | - |
dc.date.accessioned | 2013-05-19T05:27:22Z | - |
dc.date.available | 2013-05-19T05:27:22Z | - |
dc.date.issued | 2013-05-19 | - |
dc.identifier.uri | http://archives.univ-biskra.dz/handle/123456789/2708 | - |
dc.description.abstract | In this work, we discuss the design of two low noise amplifiers (LNA) based on 1mm gate-length pHEMT InP transistors using two topologies. Designed for radio-astronomy applications, the first is a cascode circuit with a maximum gain of 15dB and noise figure of 0.6dB, while the second is a 2-stage cascaded amplifier with 27 dB gain and 0.63dB noise figure. The two amplifiers exhibit an input 1-dB compression point of -22dBm and -26dBm respectively, and a third order input intercept point of -10dBm and -5dBm, respectively. | en_US |
dc.language.iso | en | en_US |
dc.subject | HEMT amplifiers; Modeling of microwave systems; Analogue electronic circuits | en_US |
dc.title | Design of a wideband low noise amplifier for radio-astronomy applications | en_US |
dc.type | Article | en_US |
Appears in Collections: | Publications Internationales |
Files in This Item:
File | Description | Size | Format | |
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B-I- hemaizia-paper.pdf | 2,62 MB | Adobe PDF | View/Open |
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