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dc.contributor.authorZ. Hamaizia-
dc.contributor.authorN. Sengouga-
dc.contributor.authorM. Missous-
dc.contributor.authorM.C.E. Yagoub-
dc.description.abstractIn this work, we discuss the design of two low noise amplifiers (LNA) based on 1mm gate-length pHEMT InP transistors using two topologies. Designed for radio-astronomy applications, the first is a cascode circuit with a maximum gain of 15dB and noise figure of 0.6dB, while the second is a 2-stage cascaded amplifier with 27 dB gain and 0.63dB noise figure. The two amplifiers exhibit an input 1-dB compression point of -22dBm and -26dBm respectively, and a third order input intercept point of -10dBm and -5dBm, respectively.en_US
dc.subjectHEMT amplifiers; Modeling of microwave systems; Analogue electronic circuitsen_US
dc.titleDesign of a wideband low noise amplifier for radio-astronomy applicationsen_US
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