Please use this identifier to cite or link to this item: http://archives.univ-biskra.dz/handle/123456789/2718
Full metadata record
DC FieldValueLanguage
dc.contributor.authorA. Sopczaka, K. Bekhoucheb, C. Bowderya, C. Damerellc, G. Daviesa, L. Dehimib, T. Greenshawd, M. Koziela, K. Stefanovc, T. Woolliscroftd, S. Wormc-
dc.date.accessioned2014-05-19T07:53:12Z-
dc.date.available2014-05-19T07:53:12Z-
dc.date.issued2014-05-19-
dc.identifier.urihttp://archives.univ-biskra.dz/handle/123456789/2718-
dc.description.abstractResults of detailed simulations of the charge transfer inefficiency of a prototype CCD chip are reported. The effect of radiation damage in a particle detector operating at the ILC is studied for two electron trap levels, 0.17 eV and 0.44 eV below the conduction band. Good agreement is found between simulations and an analytical model for the 0.17 eV level. Optimum operation is at about 250K, approximately independent of readout frequency.en_US
dc.language.isoenen_US
dc.titleRadiation hardness of CCD vertex detectors for the ILCen_US
dc.typeArticleen_US
Appears in Collections:Publications Internationales

Files in This Item:
File Description SizeFormat 
Radiation hardness of CCD vertex detectors for the ILC.pdf264,74 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.