The influence of hopping on modulated photoconductivity

Abstract

We have developed equations taking into account both multiple-trapping and hopping processes for describing transport phenomena in disordered semiconductors. These equations have been introduced into a numerical simulation to model the steady state dark conductivity and photoconductivity as well as the modulated photoconductivity. The influence of parameters such as the density of states and attempt-to-hop frequency on the results of these experiments has been investigated. Steady state and modulated photoconductivity experiments have been performed on a hydrogenated amorphous silicon film in the temperature range 18–300 K and the results have been compared with those from the numerical simulation. This comparison shows that the latter provides a suitable interpretation of the experimental behaviours observed in both experiments.doi:10.1088/0953-8984/21/4/045508