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|Title:||Monte Carlo simulation of the EBIC grain semiconductors|
|Keywords:||Electron beam induced current; Grain boundaries; Semiconductors|
|Abstract:||The electron beam induced current (JZBIC) recombination contrast of grain boundaries (GB) is calculated by means of a Monte Carlo simulation algorithm. After considering a pointlike generation source, a three-dimensional distribution of pointlike sources is simulated and used to calculate the EBIC profiles across the grain boundary. In both cases, we observe a saturation of the maximum EBIC contrast as the carrier lifetime within the GB decreases. The results show, for a three dimensional electron probe, a linear dependence of the contrast on the GB width. In addition, extrapolated values of the maximum contrast obtained for a zero width GB are in good agreement with that calculated by analytical models.|
|Appears in Collections:||Publications Internationales|
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|M.Ledra and N.Tabet-1996.pdf||350,05 kB||Adobe PDF||View/Open|
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