Elaboration, characterization and simulation of thin film transistors based on Zinc Oxide

Abstract

The thesis explores the field of polycrystalline semiconductor oxides, particularly zinc oxide (ZnO), as a key component in thin-film transistors (TFTs) crucial for electronic applications like active-matrix liquid crystal displays (AMLCDs). Utilizing numerical simulations with SILVACO ATLAS, the study investigates four main areas. First, the temperature effect on pc-ZnO TFTs is examined, revealing a temperature-dependent drain current with activation energy varying linearly from 0.57 eV to 0.071 eV across different gate voltages. Second, the impact of illumination on PC-ZnO TFTs at a low temperature of 280 K is studied, manipulating electric mobility and deep defects. Third, the grain size and boundary effects on nano-crystalline zinc oxide TFTs are explored through experimental and numerical analysis, demonstrating the influence of deposition temperature on grain size and subsequent transfer characteristics. Lastly, TFTs made of ZnO thin films deposited on various substrates are investigated, detailing the deposition process, pressure control, and annealing conditions. The research provides valuable insights into optimizing the performance of ZnO-based TFTs for electronic applications. Keywords: Elaboration, Characterization, Design, TFT, SILVACO ATLAS, Defects.