Elaboration des couches minces à base de ZnO pour transistors couches minces TFTs

Abstract

In this thesis, we have developed and characterized thin films based on ZnO. The deposition was carried out on glass substrates using the sol-gel dip-coating method. The effect of drying temperature, layer thickness, annealing method, and doping concentration on the structural, morphological, optical, and electrical properties of ZnO thin films has been studied. Analyzes revealed that the films have a polycrystalline structure of hexagonal wurtzite format, and that samples dried at high temperatures and Thicker samples and those annealed under thermal shock conditions exhibit better quality, better crystallization and superior characteristics. Aluminum doping improves the properties of ZnO thin films. We simulated a thin-film transistor (TFT), based on the properties of these ZnO layers. We studied the effect of ZnO parameters (thickness, length, and electron mobility of ZnO layers), as well as the effect of gate dielectrics on the performance and reliability of ZnO TFTs. From the simulation results, it was shown that electron mobility and change in channel length are not critical factors in the performance of ZnO TFTs. Regarding the gate dielectric effect, the results demonstrate that a double gate dielectric TFT exhibits better electrical characteristics compared to a single gate dielectric TFT.