Please use this identifier to cite or link to this item:
Title: Simulation of the pre- and post-transit time of flight methods in amorphous silicon-like. n+-i-p+ -cells
Authors: MEFTAH, AM.
Issue Date: 29-Dec-2013
Abstract: In this paper, we study, by numerical simulation, the Transient Photocurrent (TPC) resulting from the application of the 'Time Of Flight' (TOF) technique to a-Si:H n+-i-p+ cell by using a typical Density Of States (DOS) of amorphous silicon. The preand post-transit methods, currently used to probe the energy distribution of localised states, are then applied to reconstruct the proposed DOS from the simulated TPC. We demonstrate that the two methods of reconstruction are complementary and provide an efficient tool of determining the transit time.
Appears in Collections:CS N 03

Files in This Item:
File Description SizeFormat 
4-Meftah.pdf148,66 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.