NOUVEL ALGORITHME DE SIMULATION MONTÉ CARLO DU COURANT EBIC DANS LES SEMICONDUCTEURS

Abstract

We have developed a new Monte Carlo algorithm to simulate the EBIC current. The algorithm simulates the incident electron trajectories and the energy dissipation that determines the carriers generation within the semiconductor under electron bombardment. The generation function of the excess carriers obtained is given as three-dimensional distribution of point-like sources Si within the generation volume. We have calculated the trajectory of each carrier that originates from the different point-like sources Si until its collection at the Schottky contact surface or its recombination. We have discussed the effect of incident electrons energies E0 and the minority carrier diffusion length L on the collection efficiency η of a Schottky diode in germanium. Our results are in good agreement with those published in literature.