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http://archives.univ-biskra.dz/handle/123456789/613Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | HEMAIZIA, Z | - |
| dc.contributor.author | SENGOUGA, N | - |
| dc.contributor.author | MISSOUS, M | - |
| dc.date.accessioned | 2013-12-30T13:16:45Z | - |
| dc.date.available | 2013-12-30T13:16:45Z | - |
| dc.date.issued | 2013-12-30 | - |
| dc.identifier.uri | http://archives.univ-biskra.dz/handle/123456789/613 | - |
| dc.description.abstract | Accurate extraction of the small-signal equivalent circuit elements of pseudomorphic high electron mobility transistors (pHEMT) is crucial for the design of microwave analog circuits such as low noise amplifiers (LNAs). This paper presents a direct analytical extraction procedure. Its efficiency is demonstrated on two different 1μm gate-length novel high breakdown InGaAs/InAlAs pHEMTs: one is grown on a GaAs while the other is on an InP substrate. | en_US |
| dc.language.iso | en | en_US |
| dc.subject | small signal modelling | en_US |
| dc.subject | pHEMT | en_US |
| dc.subject | extraction | en_US |
| dc.title | SMALL-SIGNAL MODELING OF PHEMTS AND ANALYSIS OF THEIR MICROWAVE PERFORMANCE | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | CS N 10 | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 8- Hemaizia.pdf | 1,04 MB | Adobe PDF | View/Open |
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