Please use this identifier to cite or link to this item:
|Title:||Computer modelling and analysis of the photodegradation effect in a-Si:H p–i–n solar cell|
|Keywords:||Key words: a-Si:H; Staebler–Wronski effect; p–i–n|
|Abstract:||Using a previous model, which was developed to describe the light-induced creation of the defect density in the a-Si:H gap states, we present in this work a numerical modelling of the photodegradation effect in the a-Si:H p–i–n solar cell under continuous illumination. We first considered the simple case of a monochromatic light beam with a wavelength between 530–540 nm non uniformly absorbed, then the global standard solar spectrum (AM 1.5) illumination is taken into account. The photodegradation is analysed on the basis of the resulting changes in the free carrier’s densities, recombination rate, band structure, electrical potential and field, space charge, and current densities. Changes in the cell’s external parameters: the open circuit voltage Voc, the short circuit current density Jsc, the fill factor FF and the maximum power density Pmax are also presented. DOI: 10.1088/1674-4926/36/1/014002|
|Appears in Collections:||Publications Internationales|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.