Please use this identifier to cite or link to this item:
Title: Numerical simulation of the type inversion in n+-p-p+ Si solar cells, used for space applications, under 1 MeV electron irradiation
Authors: A.Hamache
N. Sengouga
Af. Meftah
Keywords: Keywords: Si solar cells; 1MeV electron irradiation; type inversion; numerical simulation.
Issue Date: 29-Feb-2016
Abstract: Solar cells, used for space applications, are exposed to energetic particles such as protons and electrons. The energetic particles create defects in the active region of the solar cell and the latter performance can be severely degraded. One of the phenomenons observed in Silicon solar cells exposed to 1 MeV electron irradiation is type inversion of its active region. This behaviour is numerically simulated using the SCAPS software. The current-voltage characteristics of a Si n+-p-p+ structure are calculated under AM0 for different fluences of 1MeV electrons. It was found that, amongst the many defects created, only one of them is responsible for type inversion. It is a minority trap that is an electron trap in the p-type base of the n+-p-p+ solar cell.
Appears in Collections:Publications Internationales

Files in This Item:
File Description SizeFormat 
36 B-I.pdf371,92 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.