Please use this identifier to cite or link to this item: http://archives.univ-biskra.dz/handle/123456789/7363
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dc.contributor.authorSaid Dehimi-
dc.contributor.authorAissat Abdelkader-
dc.contributor.authorDjamel Haddad-
dc.contributor.authorLakhdar Dehimi-
dc.date.accessioned2016-03-03T11:52:27Z-
dc.date.available2016-03-03T11:52:27Z-
dc.date.issued2016-03-03-
dc.identifier.urihttp://archives.univ-biskra.dz/handle/123456789/7363-
dc.description.abstractn this paper we study the effects of In concentration, temperature, quantum well width and carrier density on optical gain for GaSb/InxGa1-xSb/GaSb untrained quantum well structures. This system was chosen as it is useful in infrared emission, finally, we introduce the optimum structure of quantum well to obtain the maximum optical gain, at room temperature and infrared emission particularly 2.3 (μm), for the use this structure in application of spectroscopic analysis of the gases specially CH4. This structure can be used for light absorption to increase the solar cell efficiency a based on a quantum well and multi-junction.en_US
dc.language.isoenen_US
dc.subjectQuantum well; In1-x Gax Sb; optical gain; Laser; detectionen_US
dc.titleOptimization of Optical Gain in Inx Ga1-xSb/GaSb unstrained quantum well structuresen_US
dc.typeArticleen_US
Appears in Collections:Communications Internationales

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