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|Title:||Modélisation des cellules solaires en InGaN en utilisant Atlas Silvaco|
Indium Gallium Nitride
|Abstract:||For over a decade, the III-V materials are intensively studied for optoelectronic applications in the UV and blue. In 2003, the energy gap of InN is lowered to 0.7 eV paving the way for alloys can cover almost the entire solar spectrum. In particular, the InGaN alloy was extensively studied for photovoltaic applications due to its wide spectral coverage, its good electrical properties and resistance to high powers. In this context, we studied the operation of photovoltaic cells based on InGaN by two-dimensional numerical simulation under illumination with AM1.5 spectrum performed under SILVACO / ATLAS. We define a reference cell with a set of physical parameters, in order to analyze their influence on the conversion efficiency. Thus, several parameters are considered: Doping and dimensions of n and p regions of the cell, as well as doping and sizing window and BSF layers.|
|Appears in Collections:||Département de Génie Electrique|
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