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Title: A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device
Authors: Z. Hamaizia
N. Sengouga
M. Missous
M.C.E. Yagoub
Keywords: HEMT; LNA; SKA; SKADS; Telescope.
Issue Date: 16-Apr-2013
Abstract: In this work, the design of a novel low-noise amplifier (LNA) based on 1 μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radioastronomy applications, this amplifier exploits a common-drain configuration as input stage and a common-source inductive degeneration topology as output stage. It exhibits a maximum gain of 30 dB within an input 1 dB compression point of −16 dBm. The noise figure is 0.4 dB with an input return loss greater than −10 dB and an output return loss of −12.5 dB. The LNA consumes 85 mW from a 1.5 V power supply. Link
Appears in Collections:Publications Internationales

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