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|Title:||A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device|
|Keywords:||HEMT; LNA; SKA; SKADS; Telescope.|
|Abstract:||In this work, the design of a novel low-noise amplifier (LNA) based on 1 μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radioastronomy applications, this amplifier exploits a common-drain configuration as input stage and a common-source inductive degeneration topology as output stage. It exhibits a maximum gain of 30 dB within an input 1 dB compression point of −16 dBm. The noise figure is 0.4 dB with an input return loss greater than −10 dB and an output return loss of −12.5 dB. The LNA consumes 85 mW from a 1.5 V power supply. Link http://www.sciencedirect.com/science/article/pii/S1369800110000934|
|Appears in Collections:||Publications Internationales|
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|A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs_InAlAs_InP device.pdf||37,1 kB||Adobe PDF||View/Open|
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