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Title: Small-signal modeling of pHEMTs and analysis of their microwave Performances
Authors: Z. Hamaizia
N. Sengouga
M. Missous
Keywords: pHEMT, extraction, small signal modeling, LANs, GaAs FET, Canada.
Issue Date: 18-Apr-2014
Abstract: Accurate extraction of the small-signal equivalent circuit of GaAs microwave Field Effect Transistors (GaAs FET) is crucial for efficient design of microwave analog circuits such as Low Noise Amplifiers (LNAs). This study proposed an Improved direct analytical extraction procedure Its efficiency was demonstrated through the characterisation of two 1 µm gate-length pseudomorphic heterojonction transistors. Link
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