Improvement of a Solar Cell Performance by Introducing Defects(Amélioration des performances d’une cellule solaire en introduisant des défauts

Abstract

In this work, we investigated the tunnel oxide passivated contact (TOPCon) solar cell based on ntype Si (p-n-n+ structure), and p-type Si (n-p-p+ structure), respectively. We started by the study of a p-n single junction device. Then, we investigated the p-n-n+ configuration in which an n+ polysilicon layer is added as back-surface field (BSF) layer. Thereafter, the tunnel oxide passivated contact (TOPCon) cell was studied. This latter includes a wide bandgap (nitride or oxide) passivation layer (PL) between the absorber and BSF layers. The carrier transport and tunneling process, in such structure, are mainly ensured by electrons. Under the AM1.5G solar spectrum at ambient temperature, we investigated the BSF and the tunneling layer's effects on the solar cell output parameters. An additional study by changing the tunnel dielectric materials from the conventional