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http://archives.univ-biskra.dz/handle/123456789/25313Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Benslim, Amina | - |
| dc.date.accessioned | 2023-05-04T09:30:29Z | - |
| dc.date.available | 2023-05-04T09:30:29Z | - |
| dc.date.issued | 2022 | - |
| dc.identifier.uri | http://archives.univ-biskra.dz/handle/123456789/25313 | - |
| dc.description.abstract | The indium gallium nitride (InGaN) alloy offer a great possibility of designing and fabricating ultra-high efficiency solar cells due to its wide range of direct band gaps, strong absorption and other optoelectronic properties. This work is numerical simulation using Silvaco Atlas software to study InGaN-based Schottky barrier solar cell. First, we focused on the suitable parameters including the indium composition | en_US |
| dc.language.iso | en | en_US |
| dc.subject | InGaN alloy, Solar cell, Numerical modeling, Conversion efficiency | en_US |
| dc.title | Investigation of solar cell devices based on Indium Gallium Nitride (InGaN) ternary alloy. | en_US |
| dc.type | Thesis | en_US |
| Appears in Collections: | Sciences de la Matière | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Investigation of solar cell devices based on Indium Gallium Nitride (InGaN) ternary alloy..pdf | 3,49 MB | Adobe PDF | View/Open |
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