THE ROLE OF Ni AND Zn ON DILUTED MAGNETIC SEMICONDUCTOR Ni1-x Znx O THIN FILMS

Abstract

In this work, nickel oxide was elaborated on glass substrate at 450 °C by spray pyrolysis technique. The NiO layers were obtained with 0.05M molarity, which were deposited by various deposition rates 20, 40, 60 and 80 ml. The effects of deposition rate on the structural, electrical and optical properties were examined. NiO thin films were observed a nanocrystalline a cubic structure with a strong (111) preferred orientation, it is only phase was observed in all deposited NiO. The film elaborated with 60 ml have a minimum value of crystallite size was 15.8 nm. All NiO thin films have an average transmittance is about 70 % in the visible region. The NiO thin films have a verity in the band gap energy from, 3.34 to 3.51 eV because the effect of deposition, the minimum value was found at 80 ml, this condition have a lowest Urbach energy. The NiO thin films havean electrical resistivity was decreased from 0.625 to 0.152 (Ω.cm) with increasing the deposition rate from 20 to 80ml. The best results of NiO thin films are obtained in the deposition NiO films by 40 and 80 ml.Zn doped NiO is prepared in the configuration Ni1-xZnxO (x = 0, 0.02, 0.04, 0.08 and 0.12) using Spray technique. XRD investigation confirms the presence of cubic structure of ZnO in all the prepared samples. At low doping level of Zn, the crystal structure remains identical to NiO meanwhile some structural imperfection is observed on increasing the doping concentration. Ni doped ZnO is prepared in the configuration Ni1-xZnxO (x = 0.88, 0.92, 0.96, 0.98 and 1) using Spray technique. XRD investigation confirms the presence of wurtzite hexagonal structure of ZnO in all the prepared samples. At low doping level of Ni, the crystal structure remains identical to ZnO meanwhile some structural imperfection is observed on increasing the doping concentration. Ni1-xZnxO is a suitable candidate for Diluted Magnetic Semiconductors for spintronic applications