The effect of doping on the properties of thin films of Indium oxide (In 2 O 3) deposited by ultrasonic spray for optoelectronic application

Abstract

Our study talks about the deposition and characterization of the thin films of un-doped and doped indium oxide films obtained by ultrasonic spray technology with a view to obtaining suitable properties for optoelectronic applications, where: Firstly, we have studied the un-doped indium oxide films with different parameters such as: flow rate solution, molar concentration solution and effect of substrates type. Secondly, we have studied the effect of doping by antimony and molybdenum on indium oxide films , then we have characterized it by different techniques such as: X-RD, SEM, EDS analysis, UV spectroscopy, FTIR spectroscopy, luminous spectroscopy and Four-point technique. The main results obtained are: Indium oxide crystallizes with polycrystalline structure by a cubic structure and it is a semiconductor of type n with a band gap Eg .It has a width between 3.25-4.1 eV for all the films which have a high transmittance up to 85% with disparate electrical conductivity