Please use this identifier to cite or link to this item:
http://archives.univ-biskra.dz/handle/123456789/28233| Title: | Étude et simulation des propriétés optoélectroniques d’une diode électroluminescente (LED) de structure p-GaN/AlGaN/InGaN/ n-GaN à puits quantiques |
| Other Titles: | فيزياء |
| Authors: | BASSI OUAFA |
| Issue Date: | 20-Jun-2023 |
| URI: | http://archives.univ-biskra.dz/handle/123456789/28233 |
| Appears in Collections: | Faculté des Sciences Exactes et des Science de la Nature et de la vie (FSESNV) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Bassi_Ouafa.pdf | 3,84 MB | Adobe PDF | View/Open |
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