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|Title:||على الخصائص الضوئية لشرائح نيتريد السيلسسيوم اللامتبلور المحضرة بطريقة الرش المهبطي RF تأثير الإستطاعة|
بن خذير, م.ل.
dielectric thin films
|Abstract:||Recently great interest has been paid to amorphous silicon nitride thin films which have found a large range of application. Certain device processing requires a low temperature of film deposition, thus making sputtering a potentially useful fabrication technique. In order to investigate the influence of the radio frequency (RF) power on the optical properties of amorphous silicon nitride (a-SixNy), films were deposited using powers between 150 and 400 W. The deposition rate is an increasing function of the power. Infrared spectroscopic analysis indicates that the concentration of Si-N bonds is reduced with increase in the RF power. However, the concentration of Si-Si bonds and =N° and =Si° dangling bonds are enhanced. A decrease in the optical gap and an increase in the gap state density, refractive index and valence band tail width are observed in films depositedat at high RF power.|
|Appears in Collections:||CS N 06|
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