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Title: على الخصائص الضوئية لشرائح نيتريد السيلسسيوم اللامتبلور المحضرة بطريقة الرش المهبطي RF تأثير الإستطاعة
Authors: عطاف, ع.
سعيدي, ح.
بن خذير, م.ل.
.عيدة, م.ص
Keywords: silicon nitride
optical properties
dielectric thin films
Issue Date: 29-Dec-2013
Abstract: Recently great interest has been paid to amorphous silicon nitride thin films which have found a large range of application. Certain device processing requires a low temperature of film deposition, thus making sputtering a potentially useful fabrication technique. In order to investigate the influence of the radio frequency (RF) power on the optical properties of amorphous silicon nitride (a-SixNy), films were deposited using powers between 150 and 400 W. The deposition rate is an increasing function of the power. Infrared spectroscopic analysis indicates that the concentration of Si-N bonds is reduced with increase in the RF power. However, the concentration of Si-Si bonds and =N° and =Si° dangling bonds are enhanced. A decrease in the optical gap and an increase in the gap state density, refractive index and valence band tail width are observed in films depositedat at high RF power.
Appears in Collections:CS N 06

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