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Title: Tunneling recombination mechanism in n-type a-Si:H steady state regime
Authors: Tobbeche Souad
Merazga Amar
Keywords: Keywords: DOS - a-Si:H - steady state photoconductivity - tunneling - recombination
Issue Date: 27-Feb-2016
Abstract: In this paper we developed a recombination model for the steady state photoconductivity (SSP) with the assumption that the correlated dangling bond states (DB) act as the essential recombination centres and the electron recombination proceeds by tunneling from the conduction band tail states (TS) for n-type a-Si:H. The modeled temperature dependence of the SSP presents the main measured features, particularly the small activation energy and the thermal quenching
Appears in Collections:Publications Internationales

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