Tunneling recombination mechanism in n-type a-Si:H steady state regime

Abstract

In this paper we developed a recombination model for the steady state photoconductivity (SSP) with the assumption that the correlated dangling bond states (DB) act as the essential recombination centres and the electron recombination proceeds by tunneling from the conduction band tail states (TS) for n-type a-Si:H. The modeled temperature dependence of the SSP presents the main measured features, particularly the small activation energy and the thermal quenching