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http://archives.univ-biskra.dz/handle/123456789/7266| Title: | Modeling theeffectofdeeptrapsonthecapacitance–voltage characteristicsofp-typeSi-dopedGaAsSchottkydiodes grownonhighindexGaAssubstrates |
| Authors: | NouredineSengouga RamiBoumaraf RiazH.Mari AfakMeftah Dler Jameel NoorAlSaqri MohsinAzziz DavidTaylor MohamedHenini |
| Keywords: | Keywords: High indexGaAs Negativedifferentialcapacitance:deep levels SILVACOsimulation |
| Issue Date: | 27-Feb-2016 |
| Abstract: | Numericalsimulation,usingSILVACO-TCAD,iscarriedouttoexplainexperimentally observedeffectsofdifferenttypesofdeeplevelsonthecapacitance–voltagecharacter- isticsofp-typeSi-dopedGaAsSchottkydiodesgrownonhighindexGaAssubstrates.Two diodesweregrownon(311)Aand(211)AorientedGaAssubstratesusingMolecularBeam Epitaxy(MBE).Although,deeplevelswereobservedinbothstructures,themeasured capacitance–voltagecharacteristicsshowanegativedifferentialcapacitance(NDC)forthe (311)Adiodes,whilethe(211)Adevicesdisplayausualbehaviour.TheNDCisrelatedto the natureandspatialdistributionofthedeeplevels,whicharecharacterizedbytheDeep LevelTransientSpectroscopy(DLTS)technique.Inthe(311)Astructureonlymajoritydeep levels(holetraps)wereobservedwhilebothmajorityandminoritydeeplevelswere present inthe(211)Adiodes.Thesimulation,whichcalculatesthecapacitance–voltage characteristics intheabsenceandpresenceofdifferenttypesofdeeplevels,agreeswell withtheexperimentallyobservedbehaviour. |
| URI: | http://archives.univ-biskra.dz/handle/123456789/7266 |
| Appears in Collections: | Publications Internationales |
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| 11 B-I.pdf | 1,13 MB | Adobe PDF | View/Open |
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